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An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI

Zhao Chuan Lee, M. Sultan M. Siddiqui, Zhi-Hui Kong, Tony Tae-Hyoung Kim. An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI. In nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016. pages 437-440, IEEE, 2016. [doi]

Authors

Zhao Chuan Lee

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M. Sultan M. Siddiqui

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Zhi-Hui Kong

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Tony Tae-Hyoung Kim

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