Zhao Chuan Lee, M. Sultan M. Siddiqui, Zhi-Hui Kong, Tony Tae-Hyoung Kim. An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI. In nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016. pages 437-440, IEEE, 2016. [doi]
@inproceedings{LeeSKK16-1,
title = {An 8T SRAM with BTI-Aware Stability Monitor and two-phase write operation for cell stability improvement in 28-nm FDSOI},
author = {Zhao Chuan Lee and M. Sultan M. Siddiqui and Zhi-Hui Kong and Tony Tae-Hyoung Kim},
year = {2016},
doi = {10.1109/ESSCIRC.2016.7598335},
url = {http://dx.doi.org/10.1109/ESSCIRC.2016.7598335},
researchr = {https://researchr.org/publication/LeeSKK16-1},
cites = {0},
citedby = {0},
pages = {437-440},
booktitle = {nd European Solid-State Circuits Conference, Lausanne, Switzerland, September 12-15, 2016},
publisher = {IEEE},
isbn = {978-1-5090-2972-3},
}