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9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device

Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. Microelectronics Journal, 137:105828, 2023. [doi]

Authors

Mengxiao Lian

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Yian Yin

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Jialin Li

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Bingzhi Zou

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Keming Zhang

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Xichen Zhang

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Yafang Xie

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You Wu

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Zhixiang Zhang

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