9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device

Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. Microelectronics Journal, 137:105828, 2023. [doi]

Abstract

Abstract is missing.