Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang. 9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. Microelectronics Journal, 137:105828, 2023. [doi]
@article{LianYLZZZXWZ23,
title = {9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device},
author = {Mengxiao Lian and Yian Yin and Jialin Li and Bingzhi Zou and Keming Zhang and Xichen Zhang and Yafang Xie and You Wu and Zhixiang Zhang},
year = {2023},
doi = {10.1016/j.mejo.2023.105828},
url = {https://doi.org/10.1016/j.mejo.2023.105828},
researchr = {https://researchr.org/publication/LianYLZZZXWZ23},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {137},
pages = {105828},
}