Reliability studies of SiC vertical power MOSFETs - researchr publication authors

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Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity. Reliability studies of SiC vertical power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 2, IEEE, 2018. [doi]

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