Reliability studies of SiC vertical power MOSFETs

Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity. Reliability studies of SiC vertical power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 2, IEEE, 2018. [doi]

References

No references recorded for this publication.

Cited by

No citations of this publication recorded.