Reliability studies of SiC vertical power MOSFETs

Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity. Reliability studies of SiC vertical power MOSFETs. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 2, IEEE, 2018. [doi]

@inproceedings{LichtenwalnerHB18,
  title = {Reliability studies of SiC vertical power MOSFETs},
  author = {Daniel J. Lichtenwalner and Brett Hull and Edward Van Brunt and Shadi Sabri and Donald A. Gajewski and Dave Grider and Scott Allen and John W. Palmour and Akin Akturk and James McGarrity},
  year = {2018},
  doi = {10.1109/IRPS.2018.8353544},
  url = {https://doi.org/10.1109/IRPS.2018.8353544},
  researchr = {https://researchr.org/publication/LichtenwalnerHB18},
  cites = {0},
  citedby = {0},
  pages = {2},
  booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5479-8},
}