A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors

Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi. A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors. IEEE Trans. VLSI Syst., 19(5):900-904, 2011. [doi]

Authors

Sheng Lin

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Yong-Bin Kim

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Fabrizio Lombardi

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