Sheng Lin, Yong-Bin Kim, Fabrizio Lombardi. A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors. IEEE Trans. VLSI Syst., 19(5):900-904, 2011. [doi]
@article{LinKL11,
title = {A 11-Transistor Nanoscale CMOS Memory Cell for Hardening to Soft Errors},
author = {Sheng Lin and Yong-Bin Kim and Fabrizio Lombardi},
year = {2011},
doi = {10.1109/TVLSI.2010.2043271},
url = {http://dx.doi.org/10.1109/TVLSI.2010.2043271},
researchr = {https://researchr.org/publication/LinKL11},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {19},
number = {5},
pages = {900-904},
}