Salvatore Lombardo, James H. Stathis, Barry P. Linder. Dependence of Post-Breakdown Conduction on Gate Oxide Thickness. Microelectronics Reliability, 42(9-11):1481-1484, 2002. [doi]
@article{LombardoSL02,
title = {Dependence of Post-Breakdown Conduction on Gate Oxide Thickness},
author = {Salvatore Lombardo and James H. Stathis and Barry P. Linder},
year = {2002},
doi = {10.1016/S0026-2714(02)00174-9},
url = {http://dx.doi.org/10.1016/S0026-2714(02)00174-9},
researchr = {https://researchr.org/publication/LombardoSL02},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {42},
number = {9-11},
pages = {1481-1484},
}