2 memories: device reliability and depolarization fields

Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann 0008, Thomas Mikolajick, Uwe Schroeder, Benjamin Max. 2 memories: device reliability and depolarization fields. In 19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019. pages 1-8, IEEE, 2019. [doi]

@inproceedings{LomenzoS0MSMM19,
  title = {2 memories: device reliability and depolarization fields},
  author = {Patrick D. Lomenzo and Stefan Slesazeck and Michael Hoffmann 0008 and Thomas Mikolajick and Uwe Schroeder and Benjamin Max},
  year = {2019},
  doi = {10.1109/NVMTS47818.2019.9043368},
  url = {https://doi.org/10.1109/NVMTS47818.2019.9043368},
  researchr = {https://researchr.org/publication/LomenzoS0MSMM19},
  cites = {0},
  citedby = {0},
  pages = {1-8},
  booktitle = {19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, NC, USA, October 28-30, 2019},
  publisher = {IEEE},
  isbn = {978-1-7281-4431-3},
}