A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines

Lu Lu, Taegeun Yoo, Van Loi Le, Tony Tae-Hyoung Kim. A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines. IEEE Trans. VLSI Syst., 28(6):1345-1356, 2020. [doi]

Authors

Lu Lu

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Taegeun Yoo

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Van Loi Le

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Tony Tae-Hyoung Kim

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