A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines

Lu Lu, Taegeun Yoo, Van Loi Le, Tony Tae-Hyoung Kim. A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines. IEEE Trans. VLSI Syst., 28(6):1345-1356, 2020. [doi]

Abstract

Abstract is missing.