Lu Lu, Taegeun Yoo, Van Loi Le, Tony Tae-Hyoung Kim. A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines. IEEE Trans. VLSI Syst., 28(6):1345-1356, 2020. [doi]
@article{LuYLK20,
title = {A 0.506-pJ 16-kb 8T SRAM With Vertical Read Wordlines and Selective Dual Split Power Lines},
author = {Lu Lu and Taegeun Yoo and Van Loi Le and Tony Tae-Hyoung Kim},
year = {2020},
doi = {10.1109/TVLSI.2019.2956232},
url = {https://doi.org/10.1109/TVLSI.2019.2956232},
researchr = {https://researchr.org/publication/LuYLK20},
cites = {0},
citedby = {0},
journal = {IEEE Trans. VLSI Syst.},
volume = {28},
number = {6},
pages = {1345-1356},
}