Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM - researchr publication authors

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Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, P. Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao. Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 42-45, IEEE, 2017. [doi]

This author has not been identified. Look up 'Gia Vinh Luong' in GoogleThis author has not been identified. Look up 'Sebastiano Strangio' in GoogleThis author has not been identified. Look up 'Andreas T. Tiedemann' in GoogleThis author has not been identified. Look up 'P. Bernardy' in GoogleThis author has not been identified. Look up 'Stefan Trellenkamp' in GoogleThis author has not been identified. It may be one of the following persons:

Pierpaolo Palestri

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