Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, P. Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao. Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 42-45, IEEE, 2017. [doi]
Abstract is missing.