Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, P. Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao. Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM. In 47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017. pages 42-45, IEEE, 2017. [doi]
@inproceedings{LuongSTBTPMZ17,
title = {Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM},
author = {Gia Vinh Luong and Sebastiano Strangio and Andreas T. Tiedemann and P. Bernardy and Stefan Trellenkamp and Pierpaolo Palestri and Siegfried Mantl and Qing-Tai Zhao},
year = {2017},
doi = {10.1109/ESSDERC.2017.8066587},
url = {https://doi.org/10.1109/ESSDERC.2017.8066587},
researchr = {https://researchr.org/publication/LuongSTBTPMZ17},
cites = {0},
citedby = {0},
pages = {42-45},
booktitle = {47th European Solid-State Device Research Conference, ESSDERC 2017, Leuven, Belgium, September 11-14, 2017},
publisher = {IEEE},
isbn = {978-1-5090-5978-2},
}