Optimization of the electrical properties of Al/a-SiC: H Schottky diodes by means of thermal annealing of a-SiC: H thin films

L. Magafas, John A. Kalomiros, D. Bandekas, G. Tsirigotis. Optimization of the electrical properties of Al/a-SiC: H Schottky diodes by means of thermal annealing of a-SiC: H thin films. Microelectronics Journal, 37(11):1352-1357, 2006. [doi]

Abstract

Abstract is missing.