In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications - researchr publication authors

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F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota. In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 257-260, IEEE, 2022. [doi]

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