In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications

F. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota. In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 257-260, IEEE, 2022. [doi]

@inproceedings{MariaTBGCZ22,
  title = {In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications},
  author = {F. Serra Di Santa Maria and Christoforos G. Theodorou and Francis Balestra and Gérard Ghibaudo and Eunjung Cha and Cezar B. Zota},
  year = {2022},
  doi = {10.1109/ESSDERC55479.2022.9947142},
  url = {https://doi.org/10.1109/ESSDERC55479.2022.9947142},
  researchr = {https://researchr.org/publication/MariaTBGCZ22},
  cites = {0},
  citedby = {0},
  pages = {257-260},
  booktitle = {52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8497-8},
}