A 500 fW/bit 14 fJ/bit-access 4kb standard-cell based sub-VT memory in 65nm CMOS

Pascal Andreas Meinerzhagen, Oskar Andersson, Babak Mohammadi, S. M. Yasser Sherazi, Andreas Peter Burg, Joachim Neves Rodrigues. A 500 fW/bit 14 fJ/bit-access 4kb standard-cell based sub-VT memory in 65nm CMOS. In Proceedings of the 38th European Solid-State Circuit conference, ESSCIRC 2012, Bordeaux, France, September 17-21, 2012. pages 321-324, IEEE, 2012. [doi]

Abstract

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