A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy - researchr publication authors

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Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi. A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy. J. Solid-State Circuits, 48(9):2239-2249, 2013. [doi]

This author has not been identified. Look up 'Kousuke Miyaji' in GoogleThis author has not been identified. Look up 'Toshikazu Suzuki' in GoogleThis author has not been identified. Look up 'Shinji Miyano' in GoogleThis author has not been identified. Look up 'Ken Takeuchi' in Google

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