Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida. Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

This author has not been identified. Look up 'Tomohisa Miyao' in GoogleThis author has not been identified. Look up 'Takahisa Tanaka' in GoogleThis author has not been identified. Look up 'Itsuki Imanishi' in GoogleThis author has not been identified. Look up 'Masayuki Ichikawa' in GoogleThis author has not been identified. Look up 'Shuya Nakagawa' in GoogleThis author has not been identified. Look up 'Hiroki Ishikuro' in GoogleThis author has not been identified. Look up 'Toshitsugu Sakamoto' in GoogleThis author has not been identified. Look up 'Munehiro Tada' in GoogleThis author has not been identified. Look up 'Ken Uchida' in Google

runs on WebDSL