Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida. Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]
@inproceedings{MiyaoTIINISTU22,
title = {Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors},
author = {Tomohisa Miyao and Takahisa Tanaka and Itsuki Imanishi and Masayuki Ichikawa and Shuya Nakagawa and Hiroki Ishikuro and Toshitsugu Sakamoto and Munehiro Tada and Ken Uchida},
year = {2022},
doi = {10.1109/DRC55272.2022.9855815},
url = {https://doi.org/10.1109/DRC55272.2022.9855815},
researchr = {https://researchr.org/publication/MiyaoTIINISTU22},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9883-8},
}