Nihar R. Mohapatra, A. Dutta, Madhav P. Desai, V. Ramgopal Rao. Effect Of Fringing Capacitances In Sub 100 Nm Mosfet s With High-K Gate Dielectrics. In 14th International Conference on VLSI Design (VLSI Design 2001), 3-7 January 2001, Bangalore, India. pages 479, IEEE Computer Society, 2001. [doi]
@inproceedings{MohapatraDDR01,
title = {Effect Of Fringing Capacitances In Sub 100 Nm Mosfet s With High-K Gate Dielectrics},
author = {Nihar R. Mohapatra and A. Dutta and Madhav P. Desai and V. Ramgopal Rao},
year = {2001},
doi = {10.1109/ICVD.2001.902704},
url = {http://doi.ieeecomputersociety.org/10.1109/ICVD.2001.902704},
researchr = {https://researchr.org/publication/MohapatraDDR01},
cites = {0},
citedby = {0},
pages = {479},
booktitle = {14th International Conference on VLSI Design (VLSI Design 2001), 3-7 January 2001, Bangalore, India},
publisher = {IEEE Computer Society},
isbn = {0-7695-0831-6},
}