Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics - researchr publication authors

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Nihar R. Mohapatra, Madhav P. Desai, V. Ramgopal Rao. Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics. In 16th International Conference on VLSI Design (VLSI Design 2003), 4-8 January 2003, New Delhi, India. pages 99-104, IEEE Computer Society, 2003. [doi]

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