Nihar R. Mohapatra, Madhav P. Desai, V. Ramgopal Rao. Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics. In 16th International Conference on VLSI Design (VLSI Design 2003), 4-8 January 2003, New Delhi, India. pages 99-104, IEEE Computer Society, 2003. [doi]
@inproceedings{MohapatraDR03,
title = {Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics},
author = {Nihar R. Mohapatra and Madhav P. Desai and V. Ramgopal Rao},
year = {2003},
url = {http://csdl.computer.org/comp/proceedings/vlsid/2003/1868/00/18680099abs.htm},
tags = {analysis},
researchr = {https://researchr.org/publication/MohapatraDR03},
cites = {0},
citedby = {0},
pages = {99-104},
booktitle = {16th International Conference on VLSI Design (VLSI Design 2003), 4-8 January 2003, New Delhi, India},
publisher = {IEEE Computer Society},
isbn = {0-7695-1868-0},
}