A 298-fJ/writecycle 650-fJ/readcycle 8T three-port SRAM in 28-nm FD-SOI process technology for image processor

Haruki Mori, Tomoki Nakagawa, Yuki Kitahara, Y. Kawamoto, K. Takagi, Shusuke Yoshimoto, Shintaro Izumi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto. A 298-fJ/writecycle 650-fJ/readcycle 8T three-port SRAM in 28-nm FD-SOI process technology for image processor. In 2015 IEEE Custom Integrated Circuits Conference, CICC 2015, San Jose, CA, USA, September 28-30, 2015. pages 1-4, IEEE, 2015. [doi]

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