Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage - researchr publication

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Shunji Nakata, Hiroki Hanazono, Hiroshi Makino, Hiroki Morimura, Masayuki Miyama, Yoshio Matsuda. Increase in Read Noise Margin of Single-Bit-Line SRAM Using Adiabatic Change of Word Line Voltage. IEEE Trans. VLSI Syst., 22(3):686-690, 2014. [doi]

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