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Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

Masanori Natsui, Akira Tamakoshi, H. Honjo, T. Watanabe, Takashi Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, Mitsuo Yasuhira, Y. Ma, H. Shen, Shunsuke Fukami, H. Sato, S. Ikeda, H. Ohno, Tetsuo Endoh, Takahiro Hanyu. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]

Authors

Masanori Natsui

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Akira Tamakoshi

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H. Honjo

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T. Watanabe

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Takashi Nasuno

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C. Zhang

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T. Tanigawa

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H. Inoue

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M. Niwa

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T. Yoshiduka

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Y. Noguchi

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Mitsuo Yasuhira

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Y. Ma

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H. Shen

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Shunsuke Fukami

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H. Sato

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S. Ikeda

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H. Ohno

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Tetsuo Endoh

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Takahiro Hanyu

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