Masanori Natsui, Akira Tamakoshi, H. Honjo, T. Watanabe, Takashi Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, Mitsuo Yasuhira, Y. Ma, H. Shen, Shunsuke Fukami, H. Sato, S. Ikeda, H. Ohno, Tetsuo Endoh, Takahiro Hanyu. Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]
@inproceedings{NatsuiTHWNZTINY20,
title = {Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage},
author = {Masanori Natsui and Akira Tamakoshi and H. Honjo and T. Watanabe and Takashi Nasuno and C. Zhang and T. Tanigawa and H. Inoue and M. Niwa and T. Yoshiduka and Y. Noguchi and Mitsuo Yasuhira and Y. Ma and H. Shen and Shunsuke Fukami and H. Sato and S. Ikeda and H. Ohno and Tetsuo Endoh and Takahiro Hanyu},
year = {2020},
doi = {10.1109/VLSICircuits18222.2020.9162774},
url = {https://doi.org/10.1109/VLSICircuits18222.2020.9162774},
researchr = {https://researchr.org/publication/NatsuiTHWNZTINY20},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020},
publisher = {IEEE},
isbn = {978-1-7281-9942-9},
}