Dean Nobunaga, Ebrahim Abedifard, Frank Roohparvar, June Lee, Erwin Yu, Allahyar Vahidimowlavi, Michael Abraham, Sanjay Talreja, Rajesh Sundaram, Rod Rozman, L. Vu, Chih-Liang Chen, Uday Chandrasekhar, R. Bains, V. Viajedor, W. Mak, M. Choi, Darshak Udeshi, M. Luo, S. Qureshi, J. Tsai, F. Jaffin, Yujiang Liu, M. Mancinelli. A 50nm 8Gb NAND Flash Memory with 100MB/s Program Throughput and 200MB/s DDR Interface. In 2008 IEEE International Solid-State Circuits Conference, ISSCC 2008, Digest of Technical Papers, San Francisco, CA, USA, February 3-7, 2008. pages 426-527, IEEE, 2008. [doi]
Abstract is missing.