Postsilicon Tuning of Standby Supply Voltage in SRAMs to Reduce Yield Losses Due to Parametric Data-Retention Failures

Afshin Nourivand, Asim J. Al-Khalili, Yvon Savaria. Postsilicon Tuning of Standby Supply Voltage in SRAMs to Reduce Yield Losses Due to Parametric Data-Retention Failures. IEEE Trans. VLSI Syst., 20(1):29-41, 2012. [doi]

Abstract

Abstract is missing.