Chi Sung Oh, Ki Chul Chun, Young-Yong Byun, Yong-Ki Kim, So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sang-uhn Cha, Dong-Hak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yong Sik Park, Kijun Lee, Myung-Kyu Lee, Seungduk Baek, Junyong Noh, Jae-Wook Lee, SeungSeob Lee, Sooyoung Kim, Bo-Tak Lim, Seouk-Kyu Choi, Jin Guk Kim, Hye-In Choi, Hyuk-jun Kwon, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Kwang-Il Park, Jung-Bae Lee. 22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 330-332, IEEE, 2020. [doi]
@inproceedings{OhCBKKRPKCSLSHC20,
title = {22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme},
author = {Chi Sung Oh and Ki Chul Chun and Young-Yong Byun and Yong-Ki Kim and So-Young Kim and Yesin Ryu and Jaewon Park and Sinho Kim and Sang-uhn Cha and Dong-Hak Shin and Jungyu Lee and Jong-Pil Son and Byung-Kyu Ho and Seong Jin Cho and Beomyong Kil and Sungoh Ahn and Baekmin Lim and Yong Sik Park and Kijun Lee and Myung-Kyu Lee and Seungduk Baek and Junyong Noh and Jae-Wook Lee and SeungSeob Lee and Sooyoung Kim and Bo-Tak Lim and Seouk-Kyu Choi and Jin Guk Kim and Hye-In Choi and Hyuk-jun Kwon and Jun Jin Kong and Kyomin Sohn and Nam Sung Kim and Kwang-Il Park and Jung-Bae Lee},
year = {2020},
doi = {10.1109/ISSCC19947.2020.9063110},
url = {https://doi.org/10.1109/ISSCC19947.2020.9063110},
researchr = {https://researchr.org/publication/OhCBKKRPKCSLSHC20},
cites = {0},
citedby = {0},
pages = {330-332},
booktitle = {2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020},
publisher = {IEEE},
isbn = {978-1-7281-3205-1},
}