22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme

Chi Sung Oh, Ki Chul Chun, Young-Yong Byun, Yong-Ki Kim, So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sang-uhn Cha, Dong-Hak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yong Sik Park, Kijun Lee, Myung-Kyu Lee, Seungduk Baek, Junyong Noh, Jae-Wook Lee, SeungSeob Lee, Sooyoung Kim, Bo-Tak Lim, Seouk-Kyu Choi, Jin Guk Kim, Hye-In Choi, Hyuk-jun Kwon, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Kwang-Il Park, Jung-Bae Lee. 22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. In 2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020. pages 330-332, IEEE, 2020. [doi]

Abstract

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