Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics

Yi Ching Ong, Shou Chung Lee, A. S. Oates. Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 7-1, IEEE, 2018. [doi]

Authors

Yi Ching Ong

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Shou Chung Lee

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A. S. Oates

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