Yi Ching Ong, Shou Chung Lee, A. S. Oates. Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 7-1, IEEE, 2018. [doi]
@inproceedings{OngLO18,
title = {Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics},
author = {Yi Ching Ong and Shou Chung Lee and A. S. Oates},
year = {2018},
doi = {10.1109/IRPS.2018.8353667},
url = {https://doi.org/10.1109/IRPS.2018.8353667},
researchr = {https://researchr.org/publication/OngLO18},
cites = {0},
citedby = {0},
pages = {7},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}