A. S. Oates - researchr alias

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Viewing Publication 1 - 10 from 10

2019

Characterization of Critical Peak Current and General Model of Interconnect Systems Under Short Pulse-Width ConditionsM. H. Lin, W. S. Chou, Y.-T. Yang, A. S. Oates. irps 2019: 1-7 [doi]

2018

BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdownPin-Shiang Chen, Shou Chung Lee, A. S. Oates, C. W. Liu. irps 2018: 6 [doi]

Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectricsYi Ching Ong, Shou Chung Lee, A. S. Oates. irps 2018: 7-1 [doi]

2015

On the voltage dependence of copper/low-k dielectric breakdownShou Chung Lee, A. S. Oates. irps 2015: 3 [doi]

Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnectsM. H. Lin, A. S. Oates. irps 2015: 2 [doi]

2006

Electromigration failure distributions of dual damascene Cu /low - k interconnectsA. S. Oates, S. C. Lee. mr, 46(9-11):1581-1586, 2006. [doi]

2004

Influence of mobility model on extraction of stress dependent source-drain series resistanceM. M. De Souza, S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Prasad Chaparala. mr, 44(1):25-32, 2004. [doi]

2003

Characterisation of series resistance degradation through charge pumping techniqueS. K. Manhas, D. Chandra Sekhar, A. S. Oates, M. M. De Souza. mr, 43(4):617-624, 2003. [doi]

2001

Hot-carrier-Induced Circuit Degradation for 0.18 ?m CMOS TechnologyWei Li, Qiang Li, J. S. Yuan, Joshua McConkey, Yuan Chen, Sundar Chetlur, Jonathan Zhou, A. S. Oates. isqed 2001: 284-289 [doi]

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistorsM. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates. mr, 41(2):169-177, 2001. [doi]

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