A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors - researchr publication

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M. M. De Souza, J. Wang, S. K. Manhas, E. M. Sankara Narayanan, A. S. Oates. A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. Microelectronics Reliability, 41(2):169-177, 2001. [doi]

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