An automatic temperature compensation of internal sense ground for subquarter micron DRAM's

Tsukasa Ooishi, Yuichiro Komiya, Kei Hamade, Mho Asakura, Kenichi Yasuda, Kiyohiro Furutani, Hideto Hidaka, Hiroshi Miyamoto, Hideyuki Ozaki. An automatic temperature compensation of internal sense ground for subquarter micron DRAM's. J. Solid-State Circuits, 30(4):471-479, April 1995. [doi]

Abstract

Abstract is missing.