Robustness of 1.2 kV SiC MOSFET devices - researchr publication authors

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D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, A. Ibrahim, A. Bouzourene. Robustness of 1.2 kV SiC MOSFET devices. Microelectronics Reliability, 53(9-11):1735-1738, 2013. [doi]

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