D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, A. Ibrahim, A. Bouzourene. Robustness of 1.2 kV SiC MOSFET devices. Microelectronics Reliability, 53(9-11):1735-1738, 2013. [doi]
No references recorded for this publication.
No citations of this publication recorded.