D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, A. Ibrahim, A. Bouzourene. Robustness of 1.2 kV SiC MOSFET devices. Microelectronics Reliability, 53(9-11):1735-1738, 2013. [doi]
@article{OthmanLBKIB13,
title = {Robustness of 1.2 kV SiC MOSFET devices},
author = {D. Othman and Stéphane Lefebvre and Mounira Berkani and Zoubir Khatir and A. Ibrahim and A. Bouzourene},
year = {2013},
doi = {10.1016/j.microrel.2013.07.072},
url = {http://dx.doi.org/10.1016/j.microrel.2013.07.072},
researchr = {https://researchr.org/publication/OthmanLBKIB13},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {53},
number = {9-11},
pages = {1735-1738},
}