Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress

S. Palanisamy, Josef Lutz, R. Boldyrjew-Mast, T. Basler. Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

Abstract

Abstract is missing.