Power noise in 14, 10, and 7 nm FinFET CMOS technologies

Ravi Patel, Eby G. Friedman, Praveen Raghavan. Power noise in 14, 10, and 7 nm FinFET CMOS technologies. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 37-40, IEEE, 2016. [doi]

Authors

Ravi Patel

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Eby G. Friedman

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Praveen Raghavan

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