Ravi Patel, Eby G. Friedman, Praveen Raghavan. Power noise in 14, 10, and 7 nm FinFET CMOS technologies. In IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016. pages 37-40, IEEE, 2016. [doi]
@inproceedings{PatelFR16, title = {Power noise in 14, 10, and 7 nm FinFET CMOS technologies}, author = {Ravi Patel and Eby G. Friedman and Praveen Raghavan}, year = {2016}, doi = {10.1109/ISCAS.2016.7527164}, url = {http://dx.doi.org/10.1109/ISCAS.2016.7527164}, researchr = {https://researchr.org/publication/PatelFR16}, cites = {0}, citedby = {0}, pages = {37-40}, booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2016, Montréal, QC, Canada, May 22-25, 2016}, publisher = {IEEE}, isbn = {978-1-4799-5341-7}, }