José Pedro, João Gomes, Luis Nunes. Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-6, IEEE, 2021. [doi]
@inproceedings{PedroGN21,
title = {Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs},
author = {José Pedro and João Gomes and Luis Nunes},
year = {2021},
doi = {10.1109/BCICTS50416.2021.9682206},
url = {https://doi.org/10.1109/BCICTS50416.2021.9682206},
researchr = {https://researchr.org/publication/PedroGN21},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021},
publisher = {IEEE},
isbn = {978-1-6654-3990-9},
}