Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Müller, Michael Schröter, W. McArthur, D. Howard. Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-5, IEEE, 2021. [doi]

This author has not been identified. Look up 'S. Phillips' in GoogleThis author has not been identified. Look up 'Ed Preisler' in GoogleThis author has not been identified. Look up 'J. Zheng' in GoogleThis author has not been identified. Look up 'S. Chaudhry' in GoogleThis author has not been identified. Look up 'M. Racanelli' in GoogleThis author has not been identified. Look up 'M. Müller' in GoogleThis author has not been identified. Look up 'Michael Schröter' in GoogleThis author has not been identified. Look up 'W. McArthur' in GoogleThis author has not been identified. Look up 'D. Howard' in Google

runs on WebDSL