S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Müller, Michael Schröter, W. McArthur, D. Howard. Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-5, IEEE, 2021. [doi]
@inproceedings{PhillipsPZCRMSM21,
title = {Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications},
author = {S. Phillips and Ed Preisler and J. Zheng and S. Chaudhry and M. Racanelli and M. Müller and Michael Schröter and W. McArthur and D. Howard},
year = {2021},
doi = {10.1109/BCICTS50416.2021.9682485},
url = {https://doi.org/10.1109/BCICTS50416.2021.9682485},
researchr = {https://researchr.org/publication/PhillipsPZCRMSM21},
cites = {0},
citedby = {0},
pages = {1-5},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021},
publisher = {IEEE},
isbn = {978-1-6654-3990-9},
}